Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Journal article

Authors/Editors

Juma, Albert

Research Areas

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Publication Details

Author list: Wafula H, Robinson M, Juma A, Sakwa T, Kitui M, Araoz R, Fischer CH

Publisher: MDPI

Place: BASEL

Publication year: 2015

Journal: Coatings (2079-6412)

Journal acronym: COATINGS

Volume number: 5

Issue number: 1

Start page: 54

End page: 62

Number of pages: 9

ISSN: 2079-6412

eISSN: 2079-6412

Languages: English-Great Britain (EN-GB)

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Abstract

Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)(3) precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 x 10(-6) and 3.2 x 10(-5) cm(2)/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers.

Keywords

CuSCN, diffusion, ILGAR, In2S3

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