Stoichiometry and local bond configuration of In2S3: Cl thin films by Rutherford backscattering spectrometry
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Publication Details
Author list: Juma AO
Publisher: Elsevier
Place: AMSTERDAM
Publication year: 2016
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (0168-583X)
Journal acronym: NUCL INSTRUM METH B
Volume number: 385
Start page: 84
End page: 88
Number of pages: 5
ISSN: 0168-583X
eISSN: 1872-9584
Languages: English-Great Britain (EN-GB)
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Abstract
In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual CI from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6-xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
ILGAR, In2S3, Rutherford backscattering, Stoichiometry
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