Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis
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Author list: Juma A, Acik IO, Oluwabi AT, Mere A, Mikli V, Danilson M, Krunks M
Publisher: Elsevier
Place: AMSTERDAM
Publication year: 2016
Journal: Applied Surface Science (0169-4332)
Journal acronym: APPL SURF SCI
Volume number: 387
Start page: 539
End page: 545
Number of pages: 7
ISSN: 0169-4332
eISSN: 1873-5584
Languages: English-Great Britain (EN-GB)
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Abstract
Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5,10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 degrees C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 degrees C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 degrees C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
chemical spray pyrolysis, Dielectric properties, thin films, TiO2, Zr-doping
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