DETERMINATION OF SURFACE STOICHIOMETRY IN POLYCRYSTALLINE ALLOYS BY A CRYSTALLOGRAPHIC ELECTRON ATTENUATION MODEL - APPLICATION TO THE CE/RH SYSTEM

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Author list: ANDERSEN JET, WARREN JP, ZHANG X, LAMBERT R

Publisher: Wiley

Place: W SUSSEX

Publication year: 1994

Journal: Surface and Interface Analysis (0142-2421)

Journal acronym: SURF INTERFACE ANAL

Volume number: 21

Issue number: 8

Start page: 576

End page: 580

Number of pages: 5

ISSN: 0142-2421

eISSN: 1096-9918

Languages: English-Great Britain (EN-GB)

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Abstract

In order to obtain quantitative surface compositional information, an earlier crystallographic electron attenuation model has been extended to treat polycrystalline alloys. Simple correction factors are obtained that yield large corrections to elemental Auger intensity ratios. The model has been applied to a binary surface alloy formed by heating cerium overlayers on a polycrystalline rhodium substrate. It is shown that an alloy film is formed whose thickness is proportional to the number of Ce layers initially deposited. The surface alloy is identified as Ce3Rh2, which corresponds to a known bulk phase.

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