Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers
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Subtitle: A surface photovoltage study
Publisher: Scientific Research Publishing
Publication year: 2012
Journal: Materials Sciences and Applications (2153-117X)
Volume number: 209
Issue number: 4
Start page: 663
End page: 668
Number of pages: 6
ISSN: 2153-117X
eISSN: 2153-1188
URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201100509
Languages: English-United States (EN-US)
Abstract
Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.
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