Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties

Journal article

Authors/Editors

Muiva, Cosmas

Research Areas

No matching items found.

Publication Details

Author list: Muiva CM, Sathiaraj ST, Mwabora JM

Publisher: INOE Publishing House

Place: BUCHAREST-MAGURELE

Publication year: 2011

Journal acronym: J OPTOELECTRON ADV M

Volume number: 13

Issue number: 9-10

Start page: 1240

End page: 1245

Number of pages: 6

ISSN: 1454-4164

Languages: English-Great Britain (EN-GB)

View in Web of Science | View citing articles in Web of Science

Abstract

Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (alpha) at normal incidence was determined and an optimised direct optical band gap (E-g) of 1.92 eV was obtained at a substrate temperature (T-sub) of 673 K. Whereas low T-sub favoured incorporation of impurities in the films, elevated T-sub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.

Keywords

Chalcopyrite buffers, Energy gap, In2Se3, Opto-electronic properties, spray pyrolysis

Documents