Effects of surface passivation on top-down ZnO nanowire transistors

Conference proceedings article

Authors / Editors

Ditshego, Nonofo

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Publication Details

Author list: Ditshego NMJ, Sun K, Zeimpekis I, Ashburn P, de Planque MRR, Chong HMH

Publisher: Elsevier

Place: AMSTERDAM

Publication year: 2015

Journal: Microelectronic Engineering (0167-9317)

Journal acronym: MICROELECTRON ENG

Volume number: 145

Start page: 91

End page: 95

Number of pages: 5

ISSN: 0167-9317

Languages: English-Great Britain (EN-GB)

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Abstract

We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 10(6) and field effect mobility of 31.4 cm(2)/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to 10 V, drain current on/off ratio of 10(4) and improvement of mobility of 35.5 cm(2)/V s. The passivated device results indicate suitability for biosensing applications. (C) 2015 Elsevier B.V. All rights reserved.

Keywords

Depletion mode, Field effect transistor, Nanowire, Passivation, Remote plasma atomic layer deposition (RPALD), ZnO

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